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To reduce Schottky-barrier-induced contact and access resistance, and theimpact of charged impurity and phonon scattering on mobility in devices basedon 2D transition metal dichalcogenides (TMDs), considerable effort has been putinto exploring various doping techniques and dielectric engineering using$high-\kappa$ oxides, respectively. The goal of this work is to demonstrate a$high-\kappa$ dielectric that serves as an effective n-type charge transferdopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphoustitanium suboxide (ATO) as the '$high-\kappa$ dopant', we achieved a contactresistance of ~ $180$ ${\Omega}.{\mu}m$ which is the lowest reported value forML $MoS_{2}$. An ON current as high as $240$ ${\mu}A/{\mu}m$ and field effectmobility as high as $83$ $cm^2/V-s$ were realized using this doping technique.Moreover, intrinsic mobility as high as $102$ $cm^2/V-s$ at $300$ $K$ and $501$$cm^2/V-s$ at $77$ $K$ were achieved after ATO encapsulation which are amongthe highest mobility values reported on ML $MoS_{2}$. We also analyzed thedoping effect of ATO films on ML $MoS_{2}$, a phenomenon which is absent whenstoichiometric $TiO_{2}$ is used, using ab initio density functional theory(DFT) calculations which shows excellent agreement with our experimentalfindings. Based on the interfacial-oxygen-vacancy mediated doping as seen inthe case of $high-\kappa$ ATO - ML $MoS_{2}$, we propose a mechanism for themobility enhancement effect observed in TMD-based devices after encapsulationin a $high-\kappa$ dielectric environment.

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation