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Triggered, indistinguishable, single photons play a central role in variousquantum photonic implementations. Here, we realize a novel n$^+-$i$-$n$^{++}$diode structure embedding semiconductor quantum dots: the gated device enablesspectral tuning of the transitions and deterministic control of the observedcharged states. Blinking-free single-photon emission and high two-photonindistinguishability is observed. The linewidth's temporal evolution isinvestigated for timescales spanning more than $6$ orders of magnitude,combining photon-correlation Fourier spectroscopy, high-resolutionphotoluminescence spectroscopy, and two-photon interference (visibility of$V_{\text{TPI, 2ns}}=\left(85.5\pm2.2\right){\%}$ and $V_{\text{TPI,9ns}}=\left(78.3\pm3.0\right){\%}$). No spectral diffusion or decoherence ontimescales above $\sim 9\,\text{ns}$ is observed for most of the dots, and theemitted photons' linewidth $\left(\left(420\pm30\right)\text{MHz}\right)$deviates from the Fourier-transform limit only by a factor of $1.68$. Thus, forremote TPI experiments, visibilities above $74\%$ are anticipated. The presenceof n-doping only signifies higher available carrier mobility, making thepresented device highly attractive for future development of high-speedtunable, high-performance quantum light sources.

A unipolar quantum dot diode structure for advanced quantum light sources