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One of the major obstacles to realizing spintronic devices such as MESO logicdevices is the small signal magnitude used for magnetization readout, making itimportant to find materials with high spin-to-charge conversion efficiency.Although intermixing at the junction of two materials is a widely occurringphenomenon, its influence on material characterization and the estimation ofspin-to-charge conversion efficiencies is easily neglected or underestimated.Here, we demonstrate all electrical spin-to-charge conversion inBi$_x$Se$_{1-x}$ nanodevices and show how the conversion efficiency can beoverestimated by tens of times depending on the adjacent metal used as acontact. We attribute this to the intermixing-induced compositional change andthe properties of a polycrystal that lead to drastic changes in resistivity andspin Hall angle. Strategies to improve the spin-to-charge conversion signal insimilar structures for functional devices are discussed.

All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$