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We demonstrate advantages of samples made by mechanical stacking ofexfoliated van der Waals materials for controlling the topological surfacestate of a 3-dimensional topological insulator (TI) via interaction with anadjacent magnet layer. We assemble bilayers with pristine interfaces usingexfoliated flakes of the TI BiSbTeSe2 and the magnet Cr2Ge2Te6, therebyavoiding problems caused by interdiffusion that can affect interfaces made bytop-down deposition methods. The samples exhibit an anomalous Hall effect (AHE)with abrupt hysteretic switching. For the first time in samples composed of aTI and a separate ferromagnetic layer, we demonstrate that the amplitude of theAHE can be tuned via gate voltage with a strong peak near the Dirac point. Thisis the signature expected for the AHE due to Berry curvature associated with anexchange gap induced by interaction between the topological surface state andan out-of-plane-oriented magnet.

Gate-tunable anomalous Hall effect in a 3D topological insulator/2D magnet van der Waals heterostructure