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Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibitfascinating quantum properties such as quantum anomalous Hall effect and axioninsulator state. In this work, we systematically investigate the evolution ofthe electronic structure of MnBi2Te4 thin films. With increasing filmthickness, the electronic structure changes from an insulator-type with a largeenergy gap to one with in-gap topological surface states, which is, however,still drastically different from the bulk material. By surface doping ofalkali-metal atoms, a Rashba split band gradually emerges and hybridizes withtopological surface states, which not only reconciles the puzzling differencebetween the electronic structures of the bulk and thin film MnBi2Te4 but alsoprovides an interesting platform to establish Rashba ferromagnet that isattractive for (quantum) anomalous Hall effect. Our results provide importantinsights into the understanding and engineering of the intriguing quantumproperties of MnBi2Te4 thin films.

Evolution of the electronic structure of ultrathin MnBi2Te4 Films