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Atomic sized plasmonic tunnel junctions are of fundamental interest, withgreat promise as the smallest on-chip light sources in various optoelectronicapplications. Several mechanisms of light emission in electrically drivenplasmonic tunnel junctions have been proposed, from single-electron or higherorder multi-electron inelastic tunneling to recombination from a steady-statepopulation of hot carriers. By progressively altering the tunneling conductanceof an aluminum junction, we tune the dominant light emission mechanism throughthese possibilities for the first time, finding quantitative agreement withtheory in each regime. Improved plasmonic resonances in the energy range ofinterest increase photon yields by two orders of magnitude. These resultsdemonstrate that the dominant emission mechanism is set by a combination oftunneling rate, hot carrier relaxation timescales, and junction plasmonicproperties.

Tuning light emission crossovers in atomic-scale aluminum plasmonic tunnel junctions