English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$junctions in graphene using electronic transport, scanning tunnelingmicroscopy, and first principles calculations. The $p\text{-}n$ junction liesat the boundary between differentially-doped regions of a graphene sheet, whereone side is intrinsic and the other is charge-doped by proximity to a flake of$\alpha$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$junction contribution to the device resistance to place bounds on the junctionwidth. We achieve an ultra-sharp junction when the boundary between theintrinsic and doped regions is defined by a cleaved crystalline edge of$\alpha$-RuCl$_3$ located 2 nm from the graphene. Scanning tunnelingspectroscopy in heterostructures of graphene, hexagonal boron nitride, and$\alpha$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. Firstprinciples calculations reveal the charge-doping of graphene decays sharplyover just nanometers from the edge of the $\alpha$-RuCl$_3$ flake.

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene