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Spin-based silicon quantum dots are an attractive qubit technology forquantum information processing with respect to coherence time, control, andengineering. Here we present an exchange-only Si qubit device platform thatcombines the throughput of CMOS-like wafer processing with the versatility ofdirect-write lithography. The technology, which we coin "SLEDGE," featuresdot-shaped gates that are patterned simultaneously on one topographical planeand subsequently connected by vias to interconnect metal lines. The processdesign enables non-trivial layouts as well as flexibility in gate dimensions,material selection, and additional device features such as for rf qubitcontrol. We show that the SLEDGE process has reduced electrostatic disorderwith respect to traditional overlapping gate devices with lift-offmetallization, and we present spin coherent exchange oscillations and singlequbit blind randomized benchmarking data.

A flexible design platform for Si/SiGe exchange-only qubits with low disorder