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Two-dimensional hexagonal boron nitride (hBN) that hosts brightroom-temperature single-photon emitters (SPEs) is a promising material platformfor quantum information applications. An important step towards the practicalapplication of hBN is the on-demand, position-controlled generation of SPEs.Several strategies have been reported to achieve the deterministic creation ofhBN SPEs. However, they either rely on a substrate nanopatterning procedurethat is not compatible with integrated photonic devices or utilize a radiationsource that might cause unpredictable damage to hBN and underlying substrates.Here, we report a radiation- and lithography-free route to deterministicallyactivate hBN SPEs by nanoindentation with an atomic force microscope (AFM) tip.The method is applied to thin hBN flakes (less than 25 nm in thickness) on flatsilicon-dioxide-silicon substrates that can be readily integrated into on-chipphotonic devices. The achieved SPEs yields are above 30% by utilizing multipleindent sizes, and a maximum yield of 36% is demonstrated for the indent size ofaround 400 nm. Our results mark an important step towards the deterministiccreation and integration of hBN SPEs with photonic and plasmonic on-chipdevices.

Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates