English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A central theme in condensed matter physics is to create and understand theexotic states of matter by incorporating magnetism into topological materials.One prime example is the quantum anomalous Hall (QAH) state. Recently, MnBi2Te4has been demonstrated to be an intrinsic magnetic topological insulator and theQAH effect was observed in exfoliated MnBi2Te4 flakes. Here, we used molecularbeam epitaxy (MBE) to grow MnBi2Te4 films with thickness down to 1 septuplelayer (SL) and performed thickness-dependent transport measurements. Weobserved a non-square hysteresis loop in the antiferromagnetic state for filmswith thickness greater than 2 SL. The hysteresis loop can be separated into twoAH components. Through careful analysis, we demonstrated that one AH componentwith the larger coercive field is from the dominant MnBi2Te4 phase, while theother AH component with the smaller coercive field is from the minor Mn-dopedBi2Te3 phase in the samples. The extracted AH component of the MnBi2Te4 phaseshows a clear even-odd layer-dependent behavior, a signature ofantiferromagnetic thin films. Our studies reveal insights on how to optimizethe MBE growth conditions to improve the quality of MnBi2Te4 films, in whichthe QAH and other exotic states are predicted.

Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films