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Vacancies in materials structure -- lowering its atomic density -- take thesystem closer to the atomic limit, to which all systems are topologicallytrivial. Here we show a mechanism of mediated interaction between vacanciesinducing a topologically non-trivial phase. Within an {\it ab initio} approachwe explore topological transition dependence with the vacancy density intransition metal dichalcogenides. As a case of study, we focus on the PtSe$_2$,to which pristine form is a trivial semiconductor with an energy gap of$1.2$\,eV. The vacancies states lead to a large topological gap of $180$\,meVwithin the pristine system gap. We derive an effective model describing thistopological phase in other transition metal dichalcogenide systems. Themechanism driving the topological phase allows the construction ofbackscattering protected metallic channels embedded in a semiconducting host.

At the verge of topology: vacancy-driven quantum spin Hall in trivial insulators