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Low-frequency $1/f^{\gamma}$ noise is ubiquitous, even in high-end electronicdevices. For qubits such noise results in decrease of their coherence times.Recently, it was found that adsorbed O$_2$ molecules provide the dominantcontribution to flux noise in superconducting quantum interference devices. Toclarify the basic principles of such adsorbant noise, we have investigated theformation of low-frequency noise while the mobility of surface adsorbants isvaried by temperature. In our experiments, we measured low-frequency currentnoise in suspended monolayer graphene samples under the influence of adsorbedNe atoms. Owing to the extremely small intrinsic noise of graphene in suspendedCorbino geometry, we could resolve a combination of $1/f^{\gamma}$ andLorentzian noise spectra induced by the presence of Ne. We find that the$1/f^{\gamma}$ noise is caused by surface diffusion of Ne atoms and bytemporary formation of few-Ne-atom clusters. Our results support the idea thatclustering dynamics of defects is relevant for understanding of $1/f$ noise ingeneral metallic systems.

Electrical low-frequency $1/f^{\gamma}$ noise due to surface diffusion of scatterers on an ultra low noise graphene platform