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In this study, the electrostatically induced quantum confinement structure,quantum point contact, has been realized in p-type trilayer tungstendiselenide-based van der Waals heterostructure with modified van der Waalscontact method with degenerately doped transition metal dichalcogenidecrystals. Clear quantized conductance and pinch-off state through theone-dimensional confinement were observed by dual-gating of split gateelectrodes and top gate. Conductance plateaus were observed at step of 0.5$\times$ 2e$^{2}$/h at zero and high magnetic field in addition to quarterplateaus at a finite bias voltage condition indicating the signature ofspin-polarized quantum point contact realization.

Signature of spin-resolved quantum point contact in p-type trilayer WSe$_{2}$ van der Waals heterostructure