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Dominating electron-electron scattering enables viscous electron flowexhibiting hydrodynamic current density patterns such as Poiseuille profiles orvortices. The viscous regime has recently been observed in graphene bynon-local transport experiments and mapping of the Poiseuille profile. Here, weprobe the current-induced surface potential maps of graphene field effecttransistors with moderate mobility using scanning probe microscopy at roomtemperature. We discover micron-sized large areas appearing close to chargeneutrality that show current induced electric fields opposing the externallyapplied field. By estimating the local scattering lengths from the gatedependence of local in-plane electric fields, we find that electron-electronscattering dominates in these areas as expected for viscous flow. Moreover, wesuppress the inverted fields by artificially decreasing the electron-disorderscattering length via mild ion bombardment. These results imply that viscouselectron flow is omnipresent in graphene devices, even at moderate mobility.

Evidence for local spots of viscous electron flow in graphene at moderate mobility