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Magnetic van der Waals (vdW) materials, including ferromagnets (FM) andantiferromagnets (AFM), have given access to the investigation of magnetism intwo-dimensional (2D) limit and attracted broad interests recently. However,most of them are semiconducting or insulating and the vdW itinerant magnets,especially vdW itinerant AFM, are very rare. Here, we studied the anomalousHall effect of a vdW itinerant magnet Fe$_5$GeTe$_2$ (F5GT) with variousthicknesses down to 6.8 nm (two unit cells). Despite the robust ferromagneticground state in thin-layer F5GT, however, we show that the electron dopingimplemented by a protonic gate can eventually induce a magnetic phasetransition from FM to AFM. Realization of an antiferromagnetic phase in F5GThighlights its promising applications in high-temperature antiferromagnetic vdWdevices and heterostructures.

Gate-controlled magnetic phase transition in a van der Waals magnet Fe$_5$GeTe$_2$