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The gate-voltage-induced suppression of critical currents in metallicsuperconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802(2018)] has raised crucial questions regarding the nature and mechanism of theelectric field effect in these systems. Here, we demonstrate an enhancement ofup to 30 % in critical current in the type II superconductor NbN, micro- andnano superconducting bridges, tunable via a back-gate voltage. Our suggestedplausible mechanism of this enhancement in critical current based on surfacenucleation and pinning of Abrikosov vortices is consistent with expectationsand observations for type-II superconductor films with thicknesses comparableto their coherence length. Furthermore we demonstrate infiniteelectroresistance and a hysteretic resistance dependence on the appliedelectric field which could lead to logic and memory applications in asuperconductors-based low-dissipation digital computing paradigm. Our work thusprovides the first demonstration of an electric field enhancement in thesuperconducting property in metallic superconductors, constituting a crucialstep towards understanding of electric field-effects on the fundamentalproperties of a superconductor and its exploitation for future technologies.

Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage