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Two-dimensional (2d) nano-electronics, plasmonics, and emergent phasesrequire clean and local charge control, calling for layered, crystallineacceptors or donors. Our Raman, photovoltage, and electrical conductancemeasurements combined with \textit{ab initio} calculations establish the largework function and narrow bands of $\alpha$-RuCl$_3$ enable modulation doping ofexfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE)materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and highhomogeneity are achieved in proximate materials with a single layer of \arucl.This leads to the highest monolayer graphene (mlg) mobilities ($4,900\\text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\\text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg)($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principleoptical sensing, control via twist angle, and charge transfer through hexagonalboron nitride (hBN).

Modulation Doping via a 2d Atomic Crystalline Acceptor