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The advanced nanoscale integration available in silicon complementarymetal-oxide-semiconductor (CMOS) technology provides a key motivation for itsuse in spin-based quantum computing applications. Initial demonstrations ofquantum dot formation and spin blockade in CMOS foundry-compatible devices areencouraging, but results are yet to match the control of individual electronsdemonstrated in university-fabricated multi-gate designs. We show here that thecharge state of quantum dots formed in a CMOS nanowire device can be sensed byusing floating gates to electrostatically couple it to a remote single electrontransistor (SET) formed in an adjacent nanowire. By biasing the nanowire andgates of the remote SET with respect to the nanowire hosting the quantum dots,we controllably form ancillary quantum dots under the floating gates, thusenabling the demonstration of independent control over charge transitions in aquadruple (2x2) quantum dot array. This device overcomes the limitationsassociated with measurements based on tunnelling transport through the dots andpermits the sensing of all charge transitions, down to the last electron ineach dot. We use effective mass theory to investigate the necessaryoptimization of the device parameters in order to achieve the tunnel ratesrequired for spin-based quantum computation.

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing