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We investigate the effect of lattice disorder and local correlation effectsin finite and periodic silicene structures caused by carbon doping usingfirst-principles calculations. For both finite and periodic silicenestructures, the electronic properties carbon-doped monolayers are dramaticallychanged by controlling the doping sites in the structures, which is related tothe amount of disorder introduced in the lattice and electron-electroncorrelation effects. By changing the position of the carbon dopants, we foundthat a Mott-Anderson transition is achieved. Moreover, the band gap isdetermined by the level of lattice disorder and electronic correlation effects.Finally, these structures are ferromagnetic even under disorder which haspotential applications in Si-based nanoelectronics, such as field-effecttransistors (FETs).

Understanding disorder in 2D materials: the case of carbon doping of Silicene