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When surface states (SSs) form in topological insulators (TIs), they inheritthe properties of bulk bands, including the electron-hole (e-h) asymmetry butwith much more profound impacts. Here, via combining magneto-infraredspectroscopy with theoretical analysis, we show that e-h asymmetrysignificantly modifies the SS electronic structures when interplaying with thequantum confinement effect. Compared to the case without e-h asymmetry, the SSsnow bear not only a band asymmetry as that in the bulk but also a shift of theDirac point relative to the bulk bands and a reduction of the hybridization gapup to 70%. Our results signify the importance of e-h asymmetry in bandengineering of TIs in the thin film limit.

Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy