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The Tauc plot method is widely used to determine the bandgap ofsemiconductors via UV-visible optical spectroscopy due to its simplicity andperceived accuracy. However, the actual Tauc plot often exhibits significantbaseline absorption below the expected bandgap, leading to discrepancies in thecalculated bandgap depending on whether the linear fit is extrapolated to zeroor non-zero baseline. In this study, we show that both extrapolation methodscan produce significant errors by simulating Tauc plots with varying levels ofbaseline absorption. To address this issue, we propose a new method thatinvolves idealizing the absorption spectrum by removing its baseline beforeconstructing the Tauc plot. Experimental verification of this method using agallium phosphide (GaP) wafer with intentionally introduced baselineabsorptions shows promising results. Furthermore, we apply this new method tocubic boron arsenide (c-BAs) and resolve discrepancies in c-BAs bandgap valuesreported by different groups, obtaining a converging bandgap of 1.835 eV basedon both previous and new transmission spectra. The method is applicable to bothindirect and direct bandgap semiconductors, regardless of whether theabsorption spectrum is measured via transmission or diffuse reflectance, willbecome essential to obtain accurate values of their bandgaps.

Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with UV-Vis: A Case Study for Cubic Boron Arsenide