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Optical control of Dirac surface states (SS) in topological insulators (TI)remains one of the most challenging problems governing their potentialapplications in novel electronic and spintronic devices. Here, usingvisible-range transient absorption spectroscopy exploiting ~340 nm (~3.65 eV)pumping, we provide evidence for dynamic opening of a gap in Dirac SS of thethin-film 3D TI Bi2Se3, which has been induced by the dynamic Rashba effectoccurring in the film bulk with increasing optical pumping power (photoexcitedcarrier density). The observed effect appears through the transient absorptionband associated with inverse-bremsstrahlung-type free carrier absorption in thegapped Dirac SS. We have also recognized experimental signatures of theexistence of the higher energy Dirac SS in the 3D TI Bi2Se3 (in addition tothose known as SS1 and SS2) with energies of ~2.7 and ~3.9 eV (SS3 and SS4). Itis evidenced that the dynamic gap opening has the same effect on the Dirac SSoccurring at any energy.

Dynamic Opening of a Gap in Dirac Surface States of the Thin-Film 3D Topological Insulator Bi2Se3 Driven by the Dynamic Rashba Effect