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Inspired by the unique properties of graphene, the focus in the literature isnow on investigations of various two-dimensional (2D) materials with the aim toexplore their properties for future applications. The group IV analogues ofgraphene, i.e., silicene, germanene and stanene have been intensively studiedin recent years. However, their semi-metallic band structures hamper their usein electronic applications. Hence, the synthesis of 2D materials with band gapsof various sizes has attracted a large interest. Here, we report a successfulpreparation of a 2D Te-Ag binary alloy with a honeycomb structure.Angle-resolved photoelectron spectroscopy (ARPES) in combination withfirst-principles calculations using density functional theory (DFT) confirmedthe formation of this binary alloy. The semiconducting property is verified bythe ARPES data and a direct gap of ~0.7 eV is predicted by the DFTcalculations.

Formation of a Te-Ag Honeycomb Alloy: A New Type of Two-Dimensional Material