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Artificial modulation of a neuronal subset through ion channels activationcan initiate firing patterns of an entire neural circuit in vivo. As nanovalvesin the cell membrane, voltage-gated ion channels can be artificially controlledby the electric field gradient that caused by externally applied time varyingmagnetic fields. Herein, we theoretically investigate the feasibility ofmodulating neural activities by using magnetic spintronic nanostructures. Anantiferromagnet/ferromagnet (AFM/FM) structure is explored as neuromodulator.For FM layer with perpendicular magnetization, stable bidirectionalmagnetization switching can be achieved by applying in-plane currents throughAFM layer to induce the spin-orbit torque (SOT) due to the spin Hall effect(SHE). This Spin-orbit Torque Neurostimulator (SOTNS) utilizes in-plane chargecurrent pulses to switch the magnetization in FM layer. The time changingmagnetic stray field induces electric field that modulates the surroundingneurons. The Object Oriented Micromagnetic Framework (OOMMF) is used tocalculate space and time dependent magnetic dynamics of SOTNS structure. Thecurrent driven magnetization dynamics in SOTNS has no mechanically movingparts. Furthermore, the size of SOTNS can be down to tens of nanometers, thus,arrays of SOTNSs could be fabricated, integrated together and patterned on aflexible substrate, which gives us much more flexible control of theneuromodulation with cellular resolution.

Spin-orbit Torque and Spin Hall Effect-based Cellular Level Therapeutic Neuromodulators: Modulating Neuron Activities through Spintronic Nanodevices