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The electrical functionality of an array of semiconductor nanocrystalsdepends critically on the free carriers that may arise from impurity or surfacedoping. Herein, we used InAs nanocrystals thin films as a model system toaddress the relative contributions of these doping mechanisms by comparativeanalysis of as-synthesized and Cu-doped nanocrystal based field-effecttransistor (FET) characteristics. By applying FET simulation methods used inconventional semiconductor FETs, we elucidate surface and impurity-dopingcontributions to the overall performance of InAs NCs based FETs. As-synthesizedInAs nanocrystal-based FETs show n-type characteristics assigned to thecontribution of surface electrons accumulation layer that can be considered asan actual electron donating doping level with specific doping density and isenergetically located just below the conduction band. The Cu-doped InAs NCsFETs show enhanced n-type conduction as expected from the Cu impuritieslocation as an interstitial n-dopant in InAs nanocrystals. The simulated curvesreveal the additional contribution from electrons within an impurity sub-bandclose to the conduction band onset of the InAs NCs. The work thereforedemonstrates the utility of the bulk FET simulation methodology also toNC-based FETs. It provides guidelines for control of doping of nanocrystalarrays separately from surface contributions and impurity doping in colloidalsemiconductor NCs towards their future utilization as building blocks inbottom-up prepared optoelectronic devices.

Surface versus Impurity Doping Contributions in InAs Nanocrystals Field Effect Transistor Performance