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A monolayer of ZrO$_{2}$ has recently been grown on the Si(001) surface andshown to have ferroelectric properties, which signifies the realization of thelowest possible thickness in ferroelectric oxides [M. Dogan et al., Nano Lett.,18 (1) (2018)]. In our previous computational study, we reported on themultiple (meta)stable configurations of ZrO$_{2}$ monolayers on Si, and howswitching between a pair of differently polarized configurations may explainthe observed ferroelectric behavior of these films [M. Dogan and S.Ismail-Beigi, arXiv:1902.01022 (2019)]. In the current study, we conduct aDFT-based investigation of (i) the effect of oxygen content on the ionicpolarization of the oxide, and (ii) the role of zirconia monolayers as bufferlayers between silicon and a thicker oxide film that is normally paraelectricon silicon, e.g. SrTiO$_{3}$. We find that (i) total energy-vs-polarizationbehavior of the monolayers, as well as interface chemistry, is highly dependenton the oxygen content; and (ii) SrTiO$_{3}$/ZrO$_{2}$/Si stacks exhibitmultiple (meta)stable configurations and polarization profiles, i.e. zirconiamonolayers can induce ferroelectricity in oxides such as SrTiO$_{3}$ when usedas a buffer layer. This may enable a robust non-volatile device architecturewhere the thickness of the gate oxide (here strontium titanate) can be chosenaccording to the desired properties.

Ferroelectric ZrO$_{2}$ monolayers as buffer layers between SrTiO$_{3}$ and Si