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Layered transition-metal trichalcogenides have become one of the researchfrontiers as two-dimensional magnets and candidate materials used forphase-change memory devices. Herein we report the high-pressure synchrotronX-ray diffraction and resistivity measurements on Cr2Ge2Te6 (CGT) singlecrystal by using diamond anvil cell techniques, which reveal a mixture ofcrystalline-to-crystalline and crystalline-to-amorphous transitions takingplace concurrently at 18.3-29.2 GPa. The polymorphic transition could beinterpreted by atomic layer reconstruction and the amorphization could beunderstood in connection with randomly flipping atoms into van der Waals gaps.The amorphous (AM) phase is quenchable to ambient conditions. The electricalresistance of CGT shows a bouncing point at ~ 18 GPa, consistent with thepolymorphism phase transition. Interestingly, the high-pressure AM phaseexhibits metallic resistance with the magnitude comparable to that ofhigh-pressure crystalline phases, whereas the resistance of the AM phase atambient pressure fails to exceed that of the crystalline phase, indicating thatthe AM phase of CGT appeared under high pressure is quite unique and similarbehavior has never been observed in other phase-change materials. The resultsdefinitely would have significant implications for the design of new functionalmaterials.

Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6