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Electrical characterization of few-layer MoS2 based field effect transistorswith Ti/Au electrodes is performed in the vacuum chamber of a scanning electronmicroscope in order to study the effects of electron beam irradiation on thetransport properties of the device. A negative threshold voltage shift and acarrier mobility enhancement is observed and explained in terms of positivecharges trapped in the SiO2 gate oxide, during the irradiation. The transistorchannel current is increased up to three order of magnitudes after the exposureto an irradiation dose of 100e-/nm2. Finally, a complete field emissioncharacterization of the MoS2 flake, achieving emission stability for severalhours and a minimum turn-on field of about 20 V/um with a field enhancementfactor of about 500 at anode-cathode distance of 1.5um, demonstrates thesuitability of few-layer MoS2 as two-dimensional emitting surface forcold-cathode applications.

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors