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We present a simple model of the bimolecular charge carrier recombination inpolar amorphous organic semiconductors where the dominant part of the energeticdisorder is provided by permanent dipoles and show that the recombination rateconstant could be much smaller than the corresponding Langevin rate constant.The reason for the strong decrease of the rate constant is the long rangespatial correlation of the random energy landscape in amorphous dipolarmaterials, without spatial correlation even strong disorder does not modify theLangevin rate constant. Our study shows that the significant suppression of thebimolecular recombination could take place in homogeneous amorphous organicsemiconductors and does not need large scale inhomogeneity of the material.

Bimolecular Recombination of Charge Carriers in Polar Amorphous Organic Semiconductors: Effect of Spatial Correlation of the Random Energy Landscape