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In order to realize applications of hydrogen-adsorbed graphene, a main issueis how to control hydrogen adsorption/desorption at room temperature. In thisstudy, we demonstrate the possibility to tune hydrogen adsorption on grapheneby applying a gate voltage. The influence of the gate voltage on graphene andits hydrogen adsorption properties was investigated by electrical transportmeasurements, scanning tunneling microscopy, and density functional theorycalculations. We show that more hydrogen adsorbs on graphene with negative gatevoltage (p-type doping), compared to that without gate voltage or positive gatevoltage (n-type doping). Theoretical calculations explain the gate voltagedependence of hydrogen adsorption as modifications of the adsorption energy anddiffusion barrier of hydrogen on graphene by charge doping.

Tuning hydrogen adsorption on graphene by gate voltage