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Femtosecond carrier recombination in PbI2 is measured using tabletophigh-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy andultrafast electron diffraction. XUV absorption from 45 eV to 62 eV measurestransitions from the iodine 4d core level to the conduction band density ofstates. Photoexcitation at 400 nm creates separate and distinct transientabsorption signals for holes and electrons, separated in energy by the 2.4 eVband gap of the semiconductor. The shape of the conduction band and thereforethe XUV absorption spectrum is temperature dependent, and nonradiativerecombination converts the initial electronic excitation to thermal excitationwithin picoseconds. Ultrafast electron diffraction (UED) is used to measure thelattice temperature and confirm the recombination mechanism. The XUV and UEDresults support a 2nd-order recombination model with a rate constant of2.5x10-9 cm3/s.

Carrier-Specific Femtosecond XUV Transient Absorption of PbI2 Reveals Ultrafast Nonradiative Recombination