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Lateral and vertical heterostructures constructed of two-dimensional (2D) single-layer h-GaN and h-AlN display novel electronic and optical properties and diverse quantum structures to be utilized in 2D device applications. Lateral heterostructures formed by periodically repeating narrow h-GaN and h-AlN stripes, which are joined commensurately along their armchair edges, behave as composite semiconducting materials. Direct–indirect characters of the fundamental band gaps and their values vary with the widths of these stripes. However, for relatively wider stripes, electronic states are confined in different stripes and make a semiconductor–semiconductor junction with normal band alignment. This way one-dimensinonal multiple quantum well structures can be generated with electrons and holes confined to h-GaN stripes. Vertical heterostructures formed by thin stacks of h-GaN and h-AlN are composite semiconductors with a tunable fundamental band gap. However, depending on the stacking sequence and number of co...

Lateral and Vertical Heterostructures of h-GaN/h-AlN: Electron Confinement, Band Lineup, and Quantum Structures