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We report on hybrid memristive devices made of a network of goldnanoparticles (10 nm diameter) functionalized by tailored3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planarelectrodes with nanometer and micrometer gaps (100 nm to 10 um apart), andelectropolymerized in situ to form a monolayer film of conjugated polymer withembedded gold nanoparticles (AuNPs). Electrical properties of these filmsexhibit two interesting behaviors: (i) a NDR (negative differential resistance)behavior with a peak/valley ratio up to 17, and (ii) a memory behavior with anON/OFF current ratio of about 1E3 to 1E4. A careful study of the switchingdynamics and programming voltage window is conducted demonstrating anon-volatile memory. The data retention of the ON and OFF states is stable(tested up to 24h), well controlled by the voltage and preserved when repeatingthe switching cycles (800 in this study). We demonstrate reconfigurable Booleanfunctions in multiterminal connected NP molecule devices.

journal of physical chemistry. c./journal of physical chemistry. c

Negative Differential Resistance, Memory and Reconfigurable Logic  Functions based on Monolayer Devices derived from Gold Nanoparticles  Functionalized with Electro-polymerizable Thiophene-EDOT Units