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MoS2 atomic layers have recently attracted much interest because of theirtwo-dimensional structure as well as tunable optical, electrical, andmechanical properties for next generation electronic and electro-opticaldevices. Here we have achieved facile fabrication of MoS2 thin films on CdSnanowires by cation exchange in solution at room temperature and importantlyobserved their extraordinary magnetic properties. We establish the atomicstructure of the MoS2/CdS heterostructure by taking atomic images of theMoS2/CdS interface as well as performing first-principles density functionalgeometry optimizations and STEM-ADF image simulations. Furthermore, our firstprinciples density functional calculations for the MoS2/CdS heterostructurereveal that the magnetism in the MoS2/CdS heterostructure stems from theferromagnetic MoS2 monolayer next to the MoS2/CdS interface. The ferromagnetismis attributed to the partial occupation of the Mo dx2-y2/dxy conduction band inthe interfacial MoS2 monolayer caused by the mixed covalent-ionic bonding amongthe MoS2 and CdS monolayers near the MoS2/CdS interface. The present findingsof the ferromagnetic MoS2 monolayer with large spin polarization at theMoS2-semiconductor interface suggest a new route for fabrication of thetransition metal dichalcogenide-based magnetic semiconductor multilayers forapplications in spintronic devices.

Magnetic MoS2 Interface Monolayer on CdS Nanowire by Cation Exchange