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With reduced degrees of freedom, structural defects are expected to play agreater role in two-dimensional materials in comparison to their bulkcounterparts. In particular, mechanical strength, electronic properties, andchemical reactivity are strongly affected by crystal imperfections in theatomically thin limit. Here, ultra-high vacuum (UHV) scanning tunnelingmicroscopy (STM) and spectroscopy (STS) are employed to interrogate point andline defects in monolayer MoS2 grown on epitaxial graphene (EG) at the atomicscale. Five types of point defects are observed with the majority speciesshowing apparent structures that are consistent with vacancy and interstitialmodels. The total defect density is observed to be lower than MoS2 grown onother substrates, and is likely attributed to the van der Waals epitaxy of MoS2on EG. Grain boundaries (GBs) with 30{\deg} and 60{\deg} tilt angles resultingfrom the rotational commensurability of MoS2 on EG are more easily resolved bySTM than atomic force microscopy at similar scales due to the enhanced contrastfrom their distinct electronic states. For example, band gap reduction to ~0.8eV and ~0.5 eV is observed with STS for 30{\deg} and 60{\deg} GBs,respectively. In addition, atomic resolution STM images of these GBs are foundto agree well with proposed structure models. This work offers quantitativeinsight into the structure and properties of common defects in MoS2, andsuggests pathways for tailoring the performance of MoS2/grapheneheterostructures via defect engineering.

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene