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Surface characterizations of an organophosphorus (OP) gas detector based onchemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET)were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, andcorrelated with changes in the current-voltage characteristics of the devices.KPFM measurements on FETs allow (i) to investigate the contact potentialdifference (CPD) distribution of the polarized device as function of the gatevoltage and the exposure to OP traces and, (ii) to analyze the CPD hysteresisassociated to the presence of mobile ions on the surface. The CPD measured byKPFM on the silicon nanoribbon was corrected due to side capacitance effects inorder to determine the real quantitative surface potential. Comparison withmacroscopic Kelvin probe (KP) experiments on larger surfaces was carried out.These two approaches were quantitatively consistent. An important increase ofthe CPD values (between + 399 mV and + 302 mV) was observed after the OP sensorgrafting, corresponding to a decrease of the work function, and a weakervariation after exposure to OP (between - 14 mV and - 61 mV) was measured.Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. TheOP molecules were essentially localized on the Si-NR confirming effectivenessand selectivity of the OP sensor. A prototype was exposed to Sarin vapors andsucceeded in the detection of low vapor concentrations (40 ppm).

Physical Study by Surface Characterizations of Sarin Sensor on the Basis of Chemically Functionalized Silicon Nanoribbon Field Effect Transistor