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We study the thermoelectric properties of bulk $MoSe_2$ within relaxationtime approximation including electron-phonon and ionized impurity interactionsusing first-principles calculations at room temperatures. The anisotropy ofthis two-dimensional layered metal dichalcogenide is studied by calculations ofelectron mobility in the cross-plane and the in-plane directions. We show thatthe cross-plane mobility is two orders of magnitude smaller than the in-planeone. The inclusion of van der Waals interactions further lowers the carriermobility in the cross-plane direction but minimally affects the in-plane one.The results for in-plane electrical mobility and conductivity are in closeagreement with experimentally reported values indicating the accuracy of thecalculations. The Seebeck coefficient calculations show that this coefficientis primarily dictated by the band structure. The details of relaxation timesand inclusion of van der Waals interactions only slightly change the Seebeckcoefficient. The in-plane thermoelectric power factor reaches a maximum valueof 20 $\mu Wcm^{-1}K^{-2}$ at a carrier concentration of $1.5x10^{20}$$cm^{-3}$ at 300K.

Effect of Electron-Phonon Interaction and Ionized Impurity Scattering on the Room Temperature Thermoelectric Properties of Bulk $MoSe_2$