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GeSn alloys are metastable semiconductors that have been proposed as buildingblocks for silicon-integrated short-wave and mid-wave infrared photonic andsensing platforms. Exploiting these semiconductors requires, however, thecontrol of their epitaxy and their surface chemistry to reduce non-radiativerecombination that hinders the efficiency of optoelectronic devices. Herein, wedemonstrate that a combined sulfur- and iodine-based treatments yieldseffective passivation of Ge and Ge0.9Sn0.1 surfaces. X-ray photoemissionspectroscopy and in situ spectroscopic ellipsometry measurements were used toinvestigate the dynamics of surface stability and track the reoxidationmechanisms. Our analysis shows that the largest reduction in oxide after HItreatment, while HF+(NH4)2S results in a lower re-oxidation rate. A combinedHI+(NH4)2S treatment preserves the lowest oxide ratio <10 % up to 1 hour of airexposure, while less than half of the initial oxide coverage is reached after 4hours. These results highlight the potential of S- and I-based treatments instabilizing the GeSn surface chemistry thus enabling a passivation method thatis compatible with materials and device processing.

Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface