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The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing theAlCl$_{3}$-dosed substrate was studied to reveal key surface processes for thedevelopment of atomic-precision acceptor-doping techniques. This investigationwas performed via scanning tunneling microscopy (STM), X-ray photoelectronspectroscopy (XPS), and density functional theory (DFT) calculations. At roomtemperature, AlCl$_{3}$ readily adsorbed to the Si substrate dimers anddissociated to form a variety of species. Annealing of the AlCl$_{3}$-dosedsubstrate at temperatures below 450 $^{\circ}$C produced unique chlorinatedaluminum chains (CACs) elongated along the Si(100) dimer row direction. Anatomic model for the chains is proposed with supporting DFT calculations. Alwas incorporated into the Si substrate upon annealing at 450 $^{\circ}$C andabove, and Cl desorption was observed for temperatures beyond 450 $^{\circ}$C.Al-incorporated samples were encapsulated in Si and characterized by secondaryion mass spectrometry (SIMS) depth profiling to quantify the Al atomconcentration, which was found to be in excess of 10$^{20}$ cm$^{-3}$ across a$\sim$2.7 nm thick $\delta$-doped region. The Al concentration achieved hereand the processing parameters utilized promote AlCl$_{3}$ as a viable gaseousprecursor for novel acceptor-doped Si materials and devices for quantumcomputing.

AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al