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We report a detailed study of the strong near-field Raman scattering enhancement which takes place in tip-enhanced Raman scattering (TERS) in indium nitride. In addition to the well-known first-order optical phonons of indium nitride, highly localized Raman modes, not detectable in the far-field, appear when approaching the plasmonic probe. The frequencies of the localized modes coincide with calculated energies of second order combinational modes consisting of optical zone center phonons and acoustic phonons at the edge of the Brillouin zone. The appearance of these combinational modes suggests that TERS in indium nitride represents a special case of Raman scattering in which a resonance condition on the nanometer scale is achieved between the localized surface plasmons (LSPs) and surface plasmon polaritons (SPPs) of the probe with the charge oscillations of the material. This resonance results in a strong enhancement of the highly localized Raman modes. We suggest that the surface charge accumulation in InN [1,2,3] is the dominating reason for the unusually large enhancement of the TERS signal as compared to other inorganic semiconductors. Thus, the plasmon-resonant TERS (PR-TERS) process in InN makes this technique an excellent tool for defect characterization of indium-rich semiconductor heterostructures and nanostructures.

Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride