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Visible emission from C 2  - (B 2 Σ u  + ) anions has been identified underlying the much stronger Swan band emission from neutral C 2 (d 3 Π g ) radicals (henceforth C 2  - * and C 2 *, respectively) in MW-activated C/H/(Ar) plasmas operating under conditions appropriate for the chemical vapor deposition (CVD) of diamond. Spatially resolved measurements of the C 2  - * and C 2 * emissions as functions of the C/H/(Ar) ratio in the input gas mixture, the total pressure, and the applied MW power, together with complementary 2-D(r, z) plasma modeling, identifies dissociative electron attachment (DEA) to C 2 H radicals in the hot plasma as the dominant source of the observed C 2  - * emission. Modeling not only indicates substantially higher concentrations of C 2 H - anions (from analogous DEA to C 2 H 2 ) in the near-substrate region but also suggests that the anion number densities will typically be 3-4 orders of magnitude lower than those of the electrons and partner cations, i.e., mainly C 2 H 2  + and C 2 H 3  + . The identification of negatively charged carbon-containing species in diamond CVD plasmas offers a possible rationale for previous reports that nucleation densities and growth rates can be enhanced by applying a positive bias to the substrate.

the journal of physical chemistry. a/the journal of physical chemistry. a.

Optical Emission from C2– Anions in Microwave-Activated CH4/H2 Plasmas for Chemical Vapor Deposition of Diamond