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The ternary nitride CaZn2N2, composed only of earth-abundant elements, is anovel semiconductor with a band gap of 1.8 eV. First-principles calculationspredict that continuous Mg substitution at the Zn site will change the opticalband gap in a wide range from ~3.3 eV to ~1.9 eV for Ca(Mg1-xZnx)2N2 (x = 0-1).In this study, we demonstrate that a solid-state reaction at ambient pressureand a high-pressure synthesis at 5 GPa produce x = 0 and 0.12, and x = 0.12-1polycrystalline samples, respectively. It is experimentally confirmed that theoptical band gap can be continuously tuned from ~3.2 eV to ~1.8 eV, a rangevery close to that predicted by theory. Band-to-band photoluminescence isobserved at room temperature in the ultravioletfired region depending on x. A2% Na doping at the Ca site of CaZn2N2 converts its highly resistive state to ap-type conducting state. Particularly, the x = 0.50 sample exhibits intensegreen emission with a peak at 2.45 eV (506 nm) without any other emission fromdeep-level defects. These features meet the demands of the III-V group nitrideand arsenide/phosphide light-emitting semiconductors.

Tunable light-emission through the range 1.8-3.2 eV and p-type conductivity at room temperature for nitride semiconductors, Ca(Mg1-xZnx)2N2 (x=0-1)