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The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinicspace group C2/m with a = 28.0447(19) {\AA}, b = 4.0722(2) {\AA}, c =14.7350(9) {\AA}, and $\beta$ = 118.493(5){\deg}. The structure ofLa0.92Bi1.08S3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5infinitely long chains forming a compact three-dimensional framework withparallel tunnels. Optical spectroscopy and resistivity measurements reveal asemiconducting behavior with a band gap of ~ 1 eV and activation energy fortransport of 0.36(1) eV. Thermopower measurements suggest the majority carriersof La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phasetransitions from 2 to 300 K. Band structure calculations at the densityfunctional theory level confirm the semiconducting nature and the indirect gapof La0.92Bi1.08S3.

La1-xBi1+xS3 (x~0.08): An n-Type Semiconductor