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The challenges of patterning next generation integrated circuits have driven the semiconductor industry to look outside of traditional lithographic methods in order to continue cost effective size scaling. The directed self-assembly (DSA) of block copolymers (BCPs) is a nanofabrication technique used to reduce the periodicity of patterns prepared with traditional optical methods. BCPs with large interaction parameters (χ eff), provide access to smaller pitches and reduced interface widths. Larger χ eff is also expected to be correlated with reduced line edge roughness (LER), a critical performance parameter in integrated circuits. One approach to increasing χ eff is blending the BCP with a phase selective additive, such as an Ionic liquid (IL). The IL does not impact the etching rates of either phase, and this enables a direct interrogation of whether the change in interface width driven by higher χ eff translates into lower LER. The effect of the IL on the layer thickness and interface width of a BCP are examined, along with the corresponding changes in LER in a DSA patterned sample. The results demonstrate that increased χ eff through additive blending will not necessarily translate to a lower LER, clarifying an important design criterion for future material systems.

Influence of Additives on the Interfacial Width and Line Edge Roughness in Block Copolymer Lithography