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γ-In2Se3 is selected as a thermoelectric candidate because it has a unique crystal structure and thermal stability at relatively high temperatures. In this work we have prepared lithiated γ-In2Se3 through chemical diffusion and investigated its band structures and thermoelectric performance. After lithiation of γ-In2Se3 in lithium acetate (CH3COOLi) solution at 50oC, we have observed a high Hall carrier concentration (nH) up to ≤1.71×1018 cm-3 at room temperature (RT), which is about ∼4 orders of magnitude compared to that of pristine γ-In2Se3. The enhancement in nH is directly responsible for the remarkable improvement in electrical conductivity, and can be elucidated as the Fermi level (Fr) unpinning and moving towards the conduction band (CB) through the dominant interstitial occupation of Li+ in the γ-In2Se3 lattice. Combined with the minimum lattice thermal conductivity (κL=0.30-0.34 WK-1m-1) at ~923 K, the highest ZT value of 0.62-0.67 is attained, which is about 9-10 times that of pristine γ-In2Se3, proving that the lithiation in γ-In2Se3 is an effective approach on the improvement of the thermoelectric performance

Significantly Enhanced Thermoelectric Performance of γ-In2Se3 through Lithiation via Chemical Diffusion

Significantly Enhanced Thermoelectric Performance of γ-In₂Se₃ through Lithiation via Chemical Diffusion