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We report on the large-scale synthesis of highly oriented ultrathin MoO3layers using a simple and low-cost atmospheric pressure by van der Waalsepitaxy growth on muscovite mica substrates. By this method we are able tosynthetize high quality centimeter-scale MoO3 crystals with thicknesses rangingfrom 1.4 nm (two layers) up to a few nanometers. The crystals can be easilytransferred to an arbitrary substrate (such as SiO2) by a deterministictransfer method and extensively characterized to demonstrate the high qualityof the resulting crystal. We also study the electronic band structure of thematerial by density functional theory calculations. Interestingly, thecalculations demonstrate that bulk MoO3 has a rather weak electronic interlayerinteraction and thus it presents a monolayer-like band structure. Finally, wedemonstrate the potential of this synthesis method for optoelectronicapplications by fabricating large-area field-effect devices (10 micrometers by110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for alaser power density of 13 mW/cm2 in the UV region of the spectrum and also asan electron acceptor in a MoS2-based field-effect transistor.

Centimeter-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy