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We analyze the optical, chemical, and electrical properties of chemical vapordeposition (CVD) grown hexagonal boron nitride (h-BN) using the precursorammonia-borane ($H_3N-BH_3$) as a function of $Ar/H_2$ background pressure($P_{TOT}$). Films grown at $P_{TOT}$ less than 2.0 Torr are uniform inthickness, highly crystalline, and consist solely of h-BN. At larger $P_{TOT}$,with constant precursor flow, the growth rate increases, but the resulting h-BNis more amorphous, disordered, and $sp^3$ bonded. We attribute these changes inh-BN grown at high pressure to incomplete thermolysis of the $H_3N-BH_3$precursor from a passivated Cu catalyst. A similar increase in h-BN growth rateand amorphization is observed even at low $P_{TOT}$ if the $H_3N-BH_3$ partialpressure is initially greater than the background pressure $P_{TOT}$ at thebeginning of growth. h-BN growth using the $H_3N-BH_3$ precursor reproduciblycan give large-area, crystalline h-BN thin films, provided that the totalpressure is under 2.0 Torr and the precursor flux is well-controlled.

Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane