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Layered transition-metal chalcogenides (Zr,Hf)GeTe$_{4}$ were screened outfrom database of Atomwork as a candidate for pressure-induced superconductivitydue to their narrow band gap and high density of state near the Fermi level.The (Zr,Hf)GeTe$_{4}$ samples were synthesized in single crystal and then thecompositional ratio, crystal structures, and valence states were investigatedvia energy dispersive spectrometry, single crystal X-ray diffraction, and X-rayphotoelectron spectroscopy, respectively. The pressure-inducedsuperconductivity in both crystals were first time reported by using a diamondanvil cell with a boron-doped diamond electrode and an undoped diamondinsulating layer. The maximum superconducting transition temperatures ofZrGeTe$_{4}$ and HfGeTe$_{4}$ were 6.5 K under 57 GPa and 6.6 K under 60 GPa,respectively.

Pressure-Induced Superconductivity in Layered Transition-metal Chalcogenides (Zr,Hf)GeTe$_{4}$ Explored by Data-driven Approach