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We present a selection of stack designs for MOVPE grown InxGa1-xAsmetamorphic buffer layers following various convex-down compositionalcontinuous gradients of the In content, showing that defect generation andstrain can be managed in a variety of ways, some rather unexpected (andunreported). Indeed, we observe that it is possible to grow surprisingly thicktensile strained layers on metamorphic substrates, without significantrelaxation and defect generation. We believe our findings give significantinsights to the investigation of strain, relaxation and defect distribution inmetamorphic buffer design, so to obtain properly engineered/tailored structures(the most successful ones already finding applications in device growth).

Unexpected aspects of strain relaxation and compensation in InGaAs metamorphic structures grown by MOVPE