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Topological insulators (TIs) and topological crystal insulators (TCIs)exhibit exotic surface properties. We present optimised growth procedures toobtain high quality bulk crystals of the TCIs Pb_(1-x)Sn_(x)Te andPb_(1-x)Sn_(x)Se, and nanowires from the bulk crystals using thevapour-liquid-solid (VLS) technique. Nanowires of Pb_(1-x)Sn_(x)Te have beenproduced with a Sn composition of approx. x = 0.25, at which a transition fromtrivial to non-trivial insulator is reported. The results obtained on thegrowth of nanomaterials of Pb_(1-x)Sn_(x)Se are also described. Detailedcharacterisation of the bulk crystals and the nanomaterials through x-raydiffraction, microscopy techniques and EDX analysis are presented.

Nanomaterials of the topological crystalline insulators, Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se